P‐type doping in GaN through Be implantation | Zendy

Feng Z. C. | Zendy; Sun Y. J. | Zendy; Tan L. S. | Zendy; Chua S. J. | Zendy; Yu J. W. | Zendy; Yang C. C. | Zendy; Lu W. | Zendy; Collins W. E. | Zendy

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P‐type doping in GaN through Be implantation

Author(s) -

Feng Z. C.,

Sun Y. J.,

Tan L. S.,

Chua S. J.,

Yu J. W.,

Yang C. C.,

Lu W.,

Collins W. E.

Publication year - 2005

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200461458

Subject(s) - raman spectroscopy , photoluminescence , doping , annealing (glass) , materials science , scanning electron microscope , diffraction , acceptor , ion implantation , crystallography , optoelectronics , chemistry , condensed matter physics , optics , metallurgy , ion , physics , organic chemistry , composite material

P‐type doping through Be implantation in GaN is achieved by a two‐step annealing process. Combined photoluminescence‐Raman measurements showed Be‐related band, indicating a low acceptor ionization energy of 140 meV, and resonance Raman features. X‐ray diffraction revealed the lattice expansion due to Be‐implantation. Scanning electron microscopy exhibited the surface defects morphology with hexagonal plane like inverse open pyramids. The effect of new annealing process on Be activation is discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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