Carrier localization effect in polarized InGaN multiple quantum wells | Zendy

Žukauskas A. | Zendy; Kazlauskas K. | Zendy; Tamulaitis G. | Zendy; Mickevičius J. | Zendy; Juršėnas S. | Zendy; Kurilčik G. | Zendy; Miasojedovas S. | Zendy; Springis M. | Zendy; Tale I. | Zendy; Cheng YungChen | Zendy; Wang HsiangChen | Zendy; Huang ChiFeng | Zendy; Yang C. C. | Zendy

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Carrier localization effect in polarized InGaN multiple quantum wells

Author(s) -

Žukauskas A.,

Kazlauskas K.,

Tamulaitis G.,

Mickevičius J.,

Juršėnas S.,

Kurilčik G.,

Miasojedovas S.,

Springis M.,

Tale I.,

Cheng YungChen,

Wang HsiangChen,

Huang ChiFeng,

Yang C. C.

Publication year - 2005

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200461428

Subject(s) - photoluminescence , exciton , excitation , quantum well , monte carlo method , spectroscopy , photoluminescence excitation , materials science , molecular physics , condensed matter physics , optoelectronics , physics , optics , statistics , mathematics , quantum mechanics , laser

Carrier localization effects in polarized InGaN/GaN multiple quantum wells (MQWs) were investigated as a function of well width, d , and In content, x . Using photoreflectance (PR), photoluminescence (PL), PL excitation (PLE), selective excitation of PL, PL excitation power, and time‐resolved PL spectroscopy, the dominance of the localization effect against the built‐in field effect on carrier recombination dynamics in In x Ga 1– x N MQWs of different well width ( d = 2.0–4.0 nm, x ≈ 0.15) and In content ( x ≈ 0.22–0.27, d = 2.5 nm) was revealed. Based on the modeling of the PL spectra by Monte Carlo simulation of exciton hopping and the spectroscopic reference provided by PR, increased In content and well width were found to increase the band potential fluctuations and carrier localization depth. The density of localized states deduced from the simulation was found to be in a fair agreement with the PLE data. The built‐in field strength in InGaN QWs containing 15% of In was estimated to be of 0.5 MV/cm. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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