Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity | Zendy

Wetzel C. | Zendy; Li P. | Zendy; Detchprohm T. | Zendy; Nelson J. S. | Zendy

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Optimization of green and deep green GaInN/GaN light emitting diodes for homogeneity

Author(s) -

Wetzel C.,

Li P.,

Detchprohm T.,

Nelson J. S.

Publication year - 2005

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200461391

Subject(s) - wafer , homogeneity (statistics) , optoelectronics , materials science , light emitting diode , epitaxy , reproducibility , diode , gallium nitride , nanotechnology , computer science , chemistry , layer (electronics) , chromatography , machine learning

Development progress of high power 525 nm green LEDs employing GaInN/GaN active layers optimized for high morphological homogeneity is presented. We analyze the benefits of this process for the reproducibility in epitaxial growth and processing as well as across the wafer uniformity. We show that by means of our approach performance in terms of dominant wavelength and output power are highly reproducible across the wafer and from run to run. This lends special relevance also to any spectroscopic analysis of such sample material. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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