InN{0001} polarity by ion scattering spectroscopy
Author(s) -
Walker M.,
Veal T. D.,
Lu Hai,
Schaff W. J.,
McConville C. F.
Publication year - 2005
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200461290
Subject(s) - ion , polarity (international relations) , wurtzite crystal structure , scattering , spectroscopy , polar , sapphire , materials science , spectral line , molecular physics , chemistry , analytical chemistry (journal) , optics , hexagonal crystal system , crystallography , physics , laser , biochemistry , organic chemistry , chromatography , quantum mechanics , astronomy , cell
The polarity of a wurtzite InN thin film grown on a c‐plane sapphire substrate with GaN and AlN buffer layers has been investigated by co‐axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle‐dependence of the In scattered intensity was obtained. Comparison of the experimental polar‐angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)‐ and (000 $ \bar 1 $ )‐polarity domains indicated that the InN film is approximately 75% In‐polarity and 25% N‐polarity. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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