Resonant tunnelling and intersubband absorption in AlN – GaN superlattices | Zendy

Baumann E. | Zendy; Giorgetta F. R. | Zendy; Hofstetter D. | Zendy; Wu H. | Zendy; Schaff W. J. | Zendy; Eastman L. F. | Zendy; Kirste L. | Zendy

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Resonant tunnelling and intersubband absorption in AlN – GaN superlattices

Author(s) -

Baumann E.,

Giorgetta F. R.,

Hofstetter D.,

Wu H.,

Schaff W. J.,

Eastman L. F.,

Kirste L.

Publication year - 2005

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200460611

Subject(s) - superlattice , quantum tunnelling , absorption (acoustics) , electron , optoelectronics , materials science , condensed matter physics , physics , quantum mechanics , composite material

We report on intersubband absorption and photovoltage measurements on regular GaN/AlN‐based superlattice structures at 1.55 µm. For high barriers, the photovoltage peaks at a higher energy than the absorbance spectrum due to the decrease of the tunnelling probability. The observed photovoltage is thus the macroscopic manifestation that the 2‐dimensional electron gas at the top of the superlattice gets depleted by a vertical transport of electrons. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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