Open AccessLattice Location of Implanted 147 Nd and 147* Pm in GaN Using Emission Channeling
Author(s) -
De Vries B.,
Wahl U.,
Vantomme A.,
Correia J.G.,
ISOLDE Collaboration The
Publication year - 2002
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200390086
Subject(s) - electron , materials science , annealing (glass) , atomic physics , hexagonal crystal system , crystal structure , lattice (music) , isotope , radiochemistry , physics , crystallography , chemistry , nuclear physics , acoustics , composite material
The lattice location of 147 Nd and 147* Pm in thin‐film, single‐crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of β — particles and conversion electrons emitted by the radioactive isotopes 147 Nd and 147* Pm were measured using a position‐sensitive detector following 60 keV room temperature implantation at a dose of 1 × 10 13 cm —2 and annealing at 900 °C. The emission patterns around the [0001], [ $ \underline 1 $ 102], [ $ \underline 1 $ 101], and [ $ \underline 2 $ 113] crystal axes give direct evidence that the majority (≈70%) of Nd and Pm atoms occupy substitutional Ga sites.