Open AccessTheory of excitonic Mott transition in double quantum wells
Author(s) -
Nikolaev V. V.,
Portnoi M. E.
Publication year - 2004
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200304068
Subject(s) - mott transition , ionization , condensed matter physics , exciton , jump , electron , plasma , degree (music) , quantum well , electron density , physics , atomic physics , quantum mechanics , ion , hubbard model , laser , superconductivity , acoustics
We study the Mott transition in semiconductor quantum wells theoretically using the powerful Green's function technique. An abrupt jump in the value of the ionization degree, which happens with an increase of the carrier density or temperature, is found in a certain density‐temperature region. We show that the critical density of the Mott transition for spatially indirect excitons may be much smaller than that for direct excitons. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)