Spatially resolved photoluminescence in semiconductor nanostructures: A theoretical description | Zendy

Pistone G. | Zendy; Savasta S. | Zendy; Di Stefano O. | Zendy; Girlanda R. | Zendy

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Spatially resolved photoluminescence in semiconductor nanostructures: A theoretical description

Author(s) -

Pistone G.,

Savasta S.,

Di Stefano O.,

Girlanda R.

Publication year - 2004

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200304039

Subject(s) - photoluminescence , photoluminescence excitation , excitation , semiconductor , quantization (signal processing) , materials science , quantum well , phonon , optoelectronics , physics , optics , condensed matter physics , quantum mechanics , laser , computer science , computer vision

We present a microscopic quantum theory of spatially resolved photoluminescence in quantum wells with interface fluctuations that includes light quantization, acustic phonon scattering, and inhomogeneous sample‐excitation and/or light‐detection. The theory can model low‐temperature photoluminescence and photoluminescence excitation experiments performed in illumination, collection or illumination‐collection mode or diffusion experiments where the spatial positions of excitation and collection are scanned independently. Numerically calculated two‐dimensional images agree with images from near‐field photoluminescence experiments and put forward the potentials of the method for the understanding of near‐field light emission from semiconductor quantum structures. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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