Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy | Zendy

Kasai J. | Zendy; Mozume T. | Zendy; Yoshida H. | Zendy; Simoyama T. | Zendy; Gopal A. V. | Zendy; Ishikawa H. | Zendy

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Optical quality improvement of InGaAs/AlAs/AlAsSb coupled double quantum wells grown by molecular beam epitaxy

Author(s) -

Kasai J.,

Mozume T.,

Yoshida H.,

Simoyama T.,

Gopal A. V.,

Ishikawa H.

Publication year - 2004

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200303942

Subject(s) - molecular beam epitaxy , quantum well , optoelectronics , epitaxy , ultrashort pulse , materials science , wavelength , diffusion , absorption (acoustics) , laser , optics , chemistry , nanotechnology , layer (electronics) , physics , thermodynamics , composite material

We have grown InGaAs/AlAs/AlAsSb coupled double quantum wells (C‐DQWs) with AlAs diffusion‐stopping layers by molecular beam epitaxy. An obtained sample had many cross‐hatched lines, suggesting relatively poor structural quality. Optical measurements, however, revealed that the optical quality of the C‐DQWs was greatly improved compared to earlier C‐DQWs without AlAs diffusion‐stopping layers. The intersubband absorption saturation intensity in the present C‐DQW sample was extremely low, measuring 34 fJ/μm 2 at the optical communication wavelength of 1.62 μm, while ultrafast response times of about 600 fs were maintained. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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