Open AccessIn‐situ ellipsometry: Identification of surface terminations during GaN growth
Author(s) -
Cobet C.,
Schmidtling T.,
Drago M.,
Wollschläger N.,
Esser N.,
Richter W.,
Feenstra R. M.
Publication year - 2003
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200303833
Subject(s) - metalorganic vapour phase epitaxy , molecular beam epitaxy , ellipsometry , wurtzite crystal structure , materials science , bilayer , epitaxy , analytical chemistry (journal) , anisotropy , optoelectronics , thin film , chemistry , optics , nanotechnology , zinc , layer (electronics) , organic chemistry , biochemistry , physics , membrane , metallurgy
Spectroscopic ellipsometry (SE) is used to determine GaN surface termination during growth with metal‐organic vapor phase epitaxy (MOVPE) by a correlation to well known results of plasma‐assisted molecular beam epitaxy (PAMBE). The results manifest that in MOVPE under typical growth conditions the surface is not terminated by a Ga‐bilayer as suggested for MBE. Moreover, it turns out that ellipsometry can be used to characterize the surface reconstruction in wurtzite GaN similar as reflectance anisotropy does for cubic III–V‐compounds. The optical spectra for the PAMBE reveal clear differences between growth under Ga‐rich and N‐rich conditions, which are attributed to the presence of a Ga‐bilayer and various N‐rich reconstructions on the surface [1]. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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