Open AccessCharacteristics of amplified spontaneous emission of high indium content InGaN/GaN quantum wells with various silicon doping conditions
Author(s) -
Cheng YungChen,
Lin EnChiang,
Feng ShihWei,
Wang HsiangChen,
Yang C. C.,
Ma KungJen,
Pan ChangChi,
Chyi JenInn
Publication year - 2003
Publication title -
physica status solidi (c)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.21
H-Index - 46
eISSN - 1610-1642
pISSN - 1610-1634
DOI - 10.1002/pssc.200303474
Subject(s) - indium , doping , materials science , photoluminescence , quantum well , silicon , optoelectronics , quantum dot , optics , physics , laser
We compared the temperature dependent spectral variations of the amplified spontaneous emission (ASE) between InGaN/GaN quantum well samples of no doping, well doping, and barrier doping of silicon. The comparisons were particularly made between two series of samples with a low and a high indium content. The results show that a multi‐peak ASE spectral feature and a low energy stimulated emission peak, existing at the photoluminescence shoulder, could be observed only in the high‐indium‐content, barrier‐doped sample. Such results are supposed to originate from the formation of quantum dots of various sizes, concentrations, and shapes under the condition of barrier doping in the sample. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)