Terahertz response of Schottky wrap gate‐controlled quantum dots | Zendy

Kasai Seiya | Zendy; Han Weihua | Zendy; Yumoto Miki | Zendy; Hasegawa Hideki | Zendy

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Terahertz response of Schottky wrap gate‐controlled quantum dots

Author(s) -

Kasai Seiya,

Han Weihua,

Yumoto Miki,

Hasegawa Hideki

Publication year - 2003

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200303083

Subject(s) - terahertz radiation , quantum dot , optoelectronics , quantum tunnelling , materials science , coulomb blockade , schottky diode , polarization (electrochemistry) , electric field , schottky barrier , conductance , laser , transistor , condensed matter physics , physics , optics , chemistry , voltage , quantum mechanics , diode

THz responses of Schottky wrap gate (WPG)‐controlled quantum dots were investigated. Normal incidence THz irradiation on single‐dot and multi‐dot devices with a CH 3 OH laser (2.54 THz) changed the conductance behavior and produced an additional conductance peak in the I – V characteristics of WPG single electron transistors (SETs) at 5–20 K. The effect depended on the THz electric field polarization. The observed behavior was explained by photon assisted tunneling based on the Tien–Gordon theory.

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