Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and the mechanisms for radiative efficiency improvement | Zendy

Cheng YungChen | Zendy; Feng ShihWei | Zendy; Lin EnChiang | Zendy; Yang ChihChung | Zendy; Tseng ChengHua | Zendy; Hsu Cheng | Zendy; Ma KungJen | Zendy

Open Access

Quantum dot formation in InGaN/GaN quantum well structures with silicon doping and the mechanisms for radiative efficiency improvement

Author(s) -

Cheng YungChen,

Feng ShihWei,

Lin EnChiang,

Yang ChihChung,

Tseng ChengHua,

Hsu Cheng,

Ma KungJen

Publication year - 2003

Publication title -

physica status solidi (c)

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.21

H-Index - 46

eISSN - 1610-1642

pISSN - 1610-1634

DOI - 10.1002/pssc.200303001

Subject(s) - doping , quantum dot , silicon , quantum well , materials science , optoelectronics , quantum confined stark effect , stokes shift , relaxation (psychology) , condensed matter physics , carrier lifetime , physics , optics , luminescence , laser , psychology , social psychology

Material and optical analyses of three InGaN/GaN quantum well (QW) samples with different silicon doping conditions were conducted. Quantum dot (QD) structures were observed in samples of silicon doping either in barriers or wells. Optical characterization indicated that quantum‐confined Stark effect (QCSE) has been tremendously reduced, particularly in the barrier‐doped sample. However, contrary to the interpretation in the past, the major mechanism for QCSE reduction is due to strain relaxation, instead of carrier screening, in conjunction with the formation of QD structures. Such a conclusion is supported by the smaller change of Stokes shift upon silicon doping in wells. In the well‐doped sample, besides strain relaxation, enhanced carrier localization might represent another important mechanism for photon emission improvement.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research