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Ballistic Injection Terahertz Plasma Instability in Graphene n + –i–n–n + Field‐Effect Transistors and Lateral Diodes
Author(s) -
Ryzhii Victor,
Ryzhii Maxim,
Satou Akira,
Mitin Vladimir,
Shur Michael S.,
Otsuji Taiichi
Publication year - 2022
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202270001
Subject(s) - terahertz radiation , graphene , diode , optoelectronics , ballistic conduction , transistor , physics , electron , voltage , plasma , coulomb , dirac fermion , gate voltage , condensed matter physics , materials science , quantum mechanics
Ballistic Electrons The Coulomb drag effect in lateral n + –i–n–n + graphene diode/transistor structures with ballistic injection of graphene Dirac fermions makes it possible to strongly modify the current‐voltage characteristics to produce “gain” in the terahertz frequency range, leading to voltage‐ and current‐driven switches, frequency multipliers, and terahertz emitters. More details can be found in article number 2100694 by Victor Ryzhii and co‐workers.