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Fabrication of Single‐Crystalline InSb‐on‐Insulator by Rapid Melt Growth
Author(s) -
Me Heera,
Morgan Nicholas Paul,
Hetherington Crispin,
Athle Robin,
Steer Matthew,
Thayne Iain,
Fontcuberta i Morral Anna,
Borg Mattias
Publication year - 2022
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.532
H-Index - 104
eISSN - 1862-6319
pISSN - 1862-6300
DOI - 10.1002/pssa.202100467
Subject(s) - fabrication , materials science , optoelectronics , semiconductor , insulator (electricity) , microstructure , engineering physics , band gap , nanotechnology , metallurgy , physics , medicine , alternative medicine , pathology
InSb has the smallest bandgap and highest electron mobility among III‐V semiconductors and is widely used for photodetectors and high‐frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single‐crystalline InSb microstructures on insulator‐covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high‐quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single‐crystalline InSb is illustrated and demonstrated here for the first time.