Thermally stimulated currents in layered Ga 4 SeS 3  semiconductor | Zendy

Aytekin S. | Zendy; Yuksek N. S. | Zendy; Goktepe M. | Zendy; Gasanly N. M. | Zendy; Aydinli A. | Zendy

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Thermally stimulated currents in layered Ga 4 SeS 3 semiconductor

Author(s) -

Aytekin S.,

Yuksek N. S.,

Goktepe M.,

Gasanly N. M.,

Aydinli A.

Publication year - 2004

Publication title -

physica status solidi (a)

Language(s) - English

Resource type - Journals

eISSN - 1521-396X

pISSN - 0031-8965

DOI - 10.1002/pssa.200406854

Subject(s) - semiconductor , materials science , range (aeronautics) , current (fluid) , trapping , atmospheric temperature range , analytical chemistry (journal) , atomic physics , condensed matter physics , chemistry , optoelectronics , physics , thermodynamics , composite material , ecology , chromatography , biology

Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga 4 SeS 3 layered semiconductor samples with the current flowing along the c ‐axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga 4 SeS 3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10 –21 , 7.0 × 10 –19 and 1.5 × 10 –13 cm 2 for the capture cross section, and 1.6 × 10 10 , 6.5 × 10 10 and 1.2 × 10 11 cm –3 for the concentration of the traps studied. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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