Effect of n‐type doping on the hole transport in poly(p‐phenylene vinylene) | Zendy

Lu Mingtao | Zendy; Nicolai Herman T. | Zendy; Wetzelaer GertJan A. H. | Zendy; Blom Paul W. M. | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Effect of n‐type doping on the hole transport in poly(p‐phenylene vinylene)

Author(s) -

Lu Mingtao,

Nicolai Herman T.,

Wetzelaer GertJan A. H.,

Blom Paul W. M.

Publication year - 2011

Publication title -

journal of polymer science part b: polymer physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.65

H-Index - 145

eISSN - 1099-0488

pISSN - 0887-6266

DOI - 10.1002/polb.22372

Subject(s) - doping , poly(p phenylene vinylene) , materials science , phenylene , polymer , diode , light emitting diode , trapping , electron transport chain , electron mobility , polymer chemistry , electron , electroluminescence , molecule , optoelectronics , chemistry , nanotechnology , physics , organic chemistry , composite material , conjugated system , ecology , biochemistry , layer (electronics) , quantum mechanics , biology

N‐type doping of poly(2‐methoxy‐5‐(2′‐ethyl‐hexyloxy)‐p‐phenylene vinylene) (MEH‐PPV) with decamethylcobaltocene (DMC) strongly improves the electron transport due to filling of the electron traps. Unexpectedly, the n‐type doping simultaneously suppresses the hole transport in MEH‐PPV. We demonstrate that this strong reduction of the hole transport originates from unionized DMC molecules that act as hole traps. This hole trapping effect explains why the current of a DMC‐doped MEH‐PPV polymer light‐emitting diode is orders of magnitude lower than that of the undoped device. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research