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Study of the reverse I – V in component subcells of III–V multijunction space solar cells
Author(s) -
Martín Pablo,
González José Ramón,
García Iván,
Algora Carlos,
ReyStolle Ignacio
Publication year - 2022
Publication title -
progress in photovoltaics: research and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 2.286
H-Index - 131
eISSN - 1099-159X
pISSN - 1062-7995
DOI - 10.1002/pip.3513
Subject(s) - reverse bias , triple junction , materials science , photovoltaics , optoelectronics , degradation (telecommunications) , photovoltaic system , solar cell , depletion region , stress (linguistics) , work (physics) , biasing , condensed matter physics , voltage , physics , computer science , electrical engineering , semiconductor , thermodynamics , quantum mechanics , telecommunications , linguistics , philosophy , diode , engineering
The reverse bias operation of triple‐junction solar cells (GaInP/Ga(In)As/Ge), typically used for space photovoltaics, is poorly understood. In this work, we conduct reverse bias stress tests on both isotype subcells (GaInP, Ga(In)As and Ge) as well as in the complete triple‐junction solar cell. After each reverse bias step, forward dark and lighted I – V s are measured and modelled using Shockley and Spirito and Albergamo models to fit the characteristic parameters of each individual subcell and quantify the variations evolution caused by the stress. The changes in these parameters are thoroughly analysed in order to comprehend the basic physical processes behind the degradation observed after the reverse bias is applied. Finally, we demonstrate that the individual parameters obtained from each subcell can be combined to simulate the final I – V curve of the complete triple junction and understand how it is affected when reverse bias is applied, linking the changes observed to a sudden degradation of the GaInP top subcell at low reverse voltages.