Open AccessEffect of SiC‐Impurity Layer and Growth Temperature on MgB 2 Superconducting Tapes Fabricated by HPCVD
Author(s) -
Ranot Mahipal,
Seong Won Kyung,
Jung SoonGil,
Kang Won Nam,
Joo Jinho,
Kim ChanJoong,
Jun ByungHyuk,
Oh Sangjun
Publication year - 2012
Publication title -
chemical vapor deposition
Language(s) - English
Resource type - Journals
eISSN - 1521-3862
pISSN - 0948-1907
DOI - 10.1002/cvde.201106935
Subject(s) - materials science , amorphous solid , superconductivity , impurity , pulsed laser deposition , flux pinning , scanning electron microscope , microstructure , atmospheric temperature range , layer (electronics) , chemical vapor deposition , deposition (geology) , condensed matter physics , thin film , high temperature superconductivity , composite material , nanotechnology , crystallography , chemistry , paleontology , physics , organic chemistry , sediment , meteorology , biology
The influence of SiC‐impurity layer and growth temperature on microstructure and superconducting properties are studied for MgB 2 superconducting tapes. A pulsed laser deposition (PLD) system is used for the deposition of amorphous SiC‐impurity layers on flexible metallic Cu(001) tapes. The MgB 2 superconducting tapes are fabricated by growing MgB 2 films on the top of SiC/Cu tapes, over a wide temperature range of 460–600 °C, by using hybrid physical (HP) CVD system. Among all tapes, the MgB 2 /SiC/Cu tape deposited at a temperature of 540 °C has the highest T c of ∼37.7 K. Scanning electron microscopy (SEM) images reveal hexagonal‐shaped MgB 2 grains with good connectivity, and their sizes are found to vary with growth temperature. When compared to MgB 2 /Cu tapes, the MgB 2 /SiC/Cu tapes exhibit an opposite trend in the dependence of critical current density ( J c ) with deposition temperatures. The improved J c ( H ) behavior can be explained on the basis of the enhanced flux pinning force density ( F p ) for MgB 2 /SiC/Cu tapes upon increasing the growth temperature