Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor | Zendy

Wang Hongtao | Zendy; Gordon Roy G. | Zendy; Alvis Roger | Zendy; Ulfig Robert M. | Zendy

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Atomic Layer Deposition of Ruthenium Thin Films from an Amidinate Precursor

Author(s) -

Wang Hongtao,

Gordon Roy G.,

Alvis Roger,

Ulfig Robert M.

Publication year - 2009

Publication title -

chemical vapor deposition

Language(s) - English

Resource type - Journals

eISSN - 1521-3862

pISSN - 0948-1907

DOI - 10.1002/cvde.200906789

Subject(s) - crystallite , ruthenium , atomic layer deposition , impurity , thin film , grain boundary , substrate (aquarium) , layer (electronics) , materials science , carbon fibers , deposition (geology) , desorption , analytical chemistry (journal) , chemical engineering , nanotechnology , chemistry , catalysis , metallurgy , composite material , adsorption , microstructure , organic chemistry , paleontology , oceanography , sediment , geology , composite number , engineering , biology

Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis( N , N '‐di‐ tert ‐butylacetamidinato)ruthenium(II) dicarbonyl and O 2 . Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, E O , approaches a certain threshold ( E max ). When E O > E max the film peels off due to the recombinative desorption of O 2 at the film/substrate interface. Analysis by atomic probe microscopy (APM) shows that the crystallites are nearly free from carbon impurity (<0.1 at.‐%), while a low level of carbon (<0.5 at.‐%) is segregated near the grain boundaries. APM also shows that a small amount of O impurity (0.3 at.‐%) is distributed uniformly between the crystallites and the grain boundaries.

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