Growth of Epitaxial MgB 2  Thick Films with Columnar Structures by Using HPCVD | Zendy

Seong W. K. | Zendy; Huh J. Y. | Zendy; Kang W. N. | Zendy; Kim J.W. | Zendy; Kwon Y.S. | Zendy; Yang N.K. | Zendy; Park J.G. | Zendy

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Growth of Epitaxial MgB 2 Thick Films with Columnar Structures by Using HPCVD

Author(s) -

Seong W. K.,

Huh J. Y.,

Kang W. N.,

Kim J.W.,

Kwon Y.S.,

Yang N.K.,

Park J.G.

Publication year - 2007

Publication title -

chemical vapor deposition

Language(s) - English

Resource type - Journals

eISSN - 1521-3862

pISSN - 0948-1907

DOI - 10.1002/cvde.200706636

Subject(s) - materials science , epitaxy , transmission electron microscopy , susceptor , planar , thin film , hexagonal crystal system , composite material , crystallography , nanotechnology , chemistry , layer (electronics) , computer graphics (images) , computer science

Epitaxial MgB 2 thick films are grown on Al 2 O 3 substrates at 600 °C by using the hybrid physical (HP)CVD technique. In order to obtain a high magnesium vapor pressure around the substrates, we use a special susceptor having a susceptor cap and achieve a very high growth rate of 0.17 μm min –1 . Hexagonal‐shaped columnar structures are observed by cross‐sectional and planar‐view transmission electron microscope (TEM) images. For the 1.7 μm thick film, the T c is observed to be 40.5 K with a J c of 1.5 × 10 6 A cm –2 at 30 K. The vortex pinning mechanism by intercolumnar boundaries will be discussed.

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