Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO 2  on Al 2 O 3  (0001) | Zendy

Sousa P. M. | Zendy; Dias S. A. | Zendy; Conde O. | Zendy; Silvestre A. J. | Zendy; Branford W. R. | Zendy; Morris B. | Zendy; Yates K. A. | Zendy; Cohen L. F. | Zendy

Open Access

Influence of Growth Temperature and Carrier Flux on the Structure and Transport Properties of Highly Oriented CrO 2 on Al 2 O 3 (0001)

Author(s) -

Sousa P. M.,

Dias S. A.,

Conde O.,

Silvestre A. J.,

Branford W. R.,

Morris B.,

Yates K. A.,

Cohen L. F.

Publication year - 2007

Publication title -

chemical vapor deposition

Language(s) - English

Resource type - Journals

eISSN - 1521-3862

pISSN - 0948-1907

DOI - 10.1002/cvde.200706592

Subject(s) - sapphire , deposition (geology) , materials science , mass transport , kinetic energy , atmospheric pressure , atmospheric temperature range , flux (metallurgy) , layer (electronics) , analytical chemistry (journal) , chemical engineering , electrical resistivity and conductivity , oxygen , chemistry , nanotechnology , thermodynamics , metallurgy , optics , engineering physics , environmental chemistry , organic chemistry , laser , oceanography , engineering , biology , paleontology , quantum mechanics , physics , sediment , electrical engineering , geology

In this work we report on the structure and magnetic and electrical transport properties of CrO 2 films deposited onto (0001) sapphire by atmospheric pressure (AP)CVD from a CrO 3 precursor. Films are grown within a broad range of deposition temperatures, from 320 to 410 °C, and oxygen carrier gas flow rates of 50–500 sccm, showing that it is viable to grow highly oriented a ‐axis CrO 2 films at temperatures as low as 330 °C i.e., 60–70 °C lower than is reported in published data for the same chemical system. Depending on the experimental conditions, growth kinetic regimes dominated either by surface reaction or by mass‐transport mechanisms are identified. The growth of a Cr 2 O 3 interfacial layer as an intrinsic feature of the deposition process is studied and discussed. Films synthesized at 330 °C keep the same high quality magnetic and transport properties as those deposited at higher temperatures.

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