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Investigation on four‐port mono‐capacitor circuit with high‐pass negative group delay behavior
Author(s) -
Fenni Sofia,
Haddad Fayrouz,
Jaomiary Antonio,
Yazdani Samar S.,
Sahoa Frank Elliot,
Ramifidisoa Lucius,
Guerin Mathieu,
Rahajandraibe Wenceslas,
Ravelo Blaise
Publication year - 2022
Publication title -
international journal of circuit theory and applications
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.364
H-Index - 52
eISSN - 1097-007X
pISSN - 0098-9886
DOI - 10.1002/cta.3183
Subject(s) - admittance parameters , capacitor , topology (electrical circuits) , admittance , port (circuit theory) , network topology , group delay and phase delay , equivalent circuit , network analysis , physics , electronic engineering , computer science , engineering , electrical engineering , voltage , filter (signal processing) , electrical impedance , operating system
Most of the recent studies on unfamiliar negative group delay (NGD) circuit were focused on the classes of low‐pass (LP) and bandpass (BP) topologies. So far, few research works are currently available in the literature on the high‐pass (HP) NGD class. This paper introduces an original HP‐NGD circuit theory of four‐port passive topology constituted by a single lumped capacitor. The S‐matrix equivalent model of the innovative topology is established from the admittance matrix. The basic analytical frequency‐dependent responses are expressed. Then, the GD model is derived in function of the capacitor. It was analytically found that the four‐port mono‐capacitor passive circuit is susceptible to behave as an unfamiliar class of HP‐NGD function. An innovative HP‐NGD analysis is explored in addition to the expression of synthesis design equation in function of the expected NGD cut‐off frequency which is linked to NGD optimal value. The validity of the established HP‐NGD theory is verified with a proof of concept (POC) circuit. As expected, the POC enables HP‐NGD behavior to show a good correlation between analytical model which is confirmed by the simulation.