Open AccessFabrication of Highly Resistive NiO Thin Films for Nanoelectronic Applications
Author(s) -
Mohr Johannes,
Hennen Tyler,
Bedau Daniel,
Nag Joyeeta,
Waser Rainer,
Wouters Dirk J.
Publication year - 2022
Publication title -
advanced physics research
Language(s) - English
Resource type - Journals
ISSN - 2751-1200
DOI - 10.1002/apxr.202200008
Subject(s) - fabrication , materials science , non blocking i/o , thin film , sputtering , nanoscopic scale , insulator (electricity) , nanotechnology , nickel oxide , optoelectronics , resistive touchscreen , oxide , computer science , metallurgy , medicine , biochemistry , chemistry , alternative medicine , pathology , catalysis , computer vision
Thin films of the prototypical charge transfer insulator nickel oxide appear to be a promising material for novel nanoelectronic devices. The fabrication of the material is challenging, however, and mostly a p‐type semiconducting phase is reported. Here, the results of a factorial experiment are presented that allow optimization of the properties of thin films deposited using sputtering. A cluster analysis is performed, and four main types of films are found. Among them, the desired insulating phase is identified. From this material, nanoscale devices are fabricated, which demonstrate that the results carry over to relevant length scales. Initial switching results are reported.