Open AccessColloidal III–V Quantum Dot Photodiodes for Short‐Wave Infrared Photodetection
Author(s) -
Leemans Jari,
Pejović Vladimir,
Georgitzikis Epimitheas,
Minjauw Matthias,
Siddik Abu Bakar,
Deng YuHao,
Kuang Yinghuan,
Roelkens Gunther,
Detavernier Christophe,
Lieberman Itai,
Malinowski Paweł E.,
Cheyns David,
Hens Zeger
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202200844
Subject(s) - photodiode , photodetection , quantum dot , optoelectronics , materials science , infrared , absorption (acoustics) , band gap , photodetector , optics , physics , composite material
Abstract Short‐wave infrared (SWIR) image sensors based on colloidal quantum dots (QDs) are characterized by low cost, small pixel pitch, and spectral tunability. Adoption of QD‐SWIR imagers is, however, hampered by a reliance on restricted elements such as Pb and Hg. Here, QD photodiodes, the central element of a QD image sensor, made from non‐restricted In(As,P) QDs that operate at wavelengths up to 1400 nm are demonstrated. Three different In(As,P) QD batches that are made using a scalable, one‐size‐one‐batch reaction and feature a band‐edge absorption at 1140, 1270, and 1400 nm are implemented. These QDs are post‐processed to obtain In(As,P) nanocolloids stabilized by short‐chain ligands, from which semiconducting films of n ‐In(As,P) are formed through spincoating. For all three sizes, sandwiching such films between p ‐NiO as the hole transport layer and Nb:TiO 2 as the electron transport layer yields In(As,P) QD photodiodes that exhibit best internal quantum efficiencies at the QD band gap of 46±5% and are sensitive for SWIR light up to 1400 nm.