Open AccessUltra‐Steep‐Slope High‐Gain MoS 2 Transistors with Atomic Threshold‐Switching Gate
Author(s) -
Lin Jun,
Chen Xiaozhang,
Duan Xinpei,
Yu Zhiming,
Niu Wencheng,
Zhang Mingliang,
Liu Chang,
Li Guoli,
Liu Yuan,
Liu Xingqiang,
Zhou Peng,
Liao Lei
Publication year - 2022
Publication title -
advanced science
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 5.388
H-Index - 100
ISSN - 2198-3844
DOI - 10.1002/advs.202104439
Subject(s) - materials science , optoelectronics , transistor , subthreshold slope , field effect transistor , electronics , semiconductor , nanotechnology , voltage , electrical engineering , engineering
The fundamental Boltzmann limitation dictates the ultimate limit of subthreshold swing (SS) to be 60 mV dec −1 , which prevents the continued scaling of supply voltage. With atomically thin body, 2D semiconductors provide new possibilities for advanced low‐power electronics. Herein, ultra‐steep‐slope MoS 2 resistive‐gate field‐effect transistors (RG‐FETs) by integrating atomic‐scale‐resistive filamentary with conventional MoS 2 transistors, demonstrating an ultra‐low SS below 1 mV dec −1 at room temperature are reported. The abrupt resistance transition of the nanoscale‐resistive filamentary ensures dramatic change in gate potential, and switches the device on and off, leading to ultra‐steep SS. Simultaneously, RG‐FETs demonstrate a high on/off ratio of 2.76 × 10 7 with superior reproducibility and reliability. With the ultra‐steep SS, the RG‐FETs can be readily employed to construct logic inverter with an ultra‐high gain ≈2000, indicating exciting potential for future low‐power electronics and monolithic integration.