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Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm
Author(s) -
Filippone Francesco,
Younis Saeed,
Mattioli Giuseppe,
Felici Marco,
Blundo Elena,
Polimeni Antonio,
Pettinari Giorgio,
Giubertoni Damiano,
Sterzer Eduard,
Volz Kerstin,
Fekete Dan,
Kapon Eli,
Amore Bonapasta Aldo
Publication year - 2022
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202108862
Subject(s) - materials science , passivation , density functional theory , photoluminescence , matrix (chemical analysis) , annealing (glass) , band gap , nitride , chemical physics , hydrogen , nanotechnology , computational chemistry , optoelectronics , quantum mechanics , metallurgy , chemistry , physics , layer (electronics) , composite material
In dilute nitride In y Ga 1− y As 1− x N x alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms—inducing a significant reduction of this parameter—with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N–H complexes in both Ga‐rich and In‐rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In‐N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In‐rich N environment, the In y Ga 1− y As host matrix exerts a selective action on the N–H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect‐engineering by proposing a novel paradigm where a major role pertains to the defect‐surrounding matrix.