Premium
Out‐of‐Plane Resistance Switching of 2D Bi 2 O 2 Se at the Nanoscale
Author(s) -
Chen Wenjun,
Zhang Rongjie,
Zheng Rongxu,
Liu Bilu
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202105795
Subject(s) - hillock , materials science , nanoelectronics , nanoscopic scale , ohmic contact , electrical conductor , nanotechnology , electric field , plane (geometry) , optoelectronics , condensed matter physics , composite material , geometry , mathematics , layer (electronics) , physics , quantum mechanics
Two‐dimensional (2D) bismuth oxyselenide (Bi 2 O 2 Se) with high electron mobility shows great potential for nanoelectronics. Although the in‐plane properties of Bi 2 O 2 Se have been widely studied, its out‐of‐plane electrical transport behavior remains elusive, despite its importance in fabricating devices with new functionality and high integration density. Here, the out‐of‐plane electrical properties of 2D Bi 2 O 2 Se at nanoscale are revealed by conductive atomic force microscope. This work finds that hillocks with tunable heights and sizes are formed on Bi 2 O 2 Se after applying a vertical electric field. Intriguingly, such hillocks are conductive in the vertical direction, resulting in a previously unknown out‐of‐plane resistance switching in thick Bi 2 O 2 Se flakes while ohmic conductive characteristic in thin ones. Furthermore, the transformation is observed from bipolar to stable unipolar conduction in thick Bi 2 O 2 Se flake possessing such hillocks, suggesting its potential to function as a selector in vertical devices. This work reveals the unique out‐of‐plane transport behavior of 2D Bi 2 O 2 Se, providing the basis for fabricating vertical devices based on this emerging 2D material.