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Low‐Voltage Magnetoelectric Coupling in Fe 0.5 Rh 0.5 /0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 Thin‐Film Heterostructures
Author(s) -
Zhao Wenbo,
Kim Jieun,
Huang Xiaoxi,
Zhang Lei,
Pesquera David,
Velarde Gabriel A. P.,
Gosavi Tanay,
Lin ChiaChing,
Nikonov Dmitri E.,
Li Hai,
Young Ian A.,
Ramesh Ramamoorthy,
Martin Lane W.
Publication year - 2021
Publication title -
advanced functional materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 6.069
H-Index - 322
eISSN - 1616-3028
pISSN - 1616-301X
DOI - 10.1002/adfm.202105068
Subject(s) - materials science , coupling (piping) , heterojunction , epitaxy , magnetoelectric effect , voltage , condensed matter physics , thin film , optoelectronics , multiferroics , analytical chemistry (journal) , nanotechnology , electrical engineering , ferroelectricity , physics , layer (electronics) , engineering , dielectric , metallurgy , chemistry , chromatography
Abstract The rapid development of computing applications demands novel low‐energy consumption devices for information processing. Among various candidates, magnetoelectric heterostructures hold promise for meeting the required voltage and power goals. Here, a route to low‐voltage control of magnetism in 30 nm Fe 0.5 Rh 0.5 /100 nm 0.68PbMg 1/3 Nb 2/3 O 3 ‐0.32PbTiO 3 (PMN‐PT) heterostructures is demonstrated wherein the magnetoelectric coupling is achieved via strain‐induced changes in the Fe 0.5 Rh 0.5 mediated by voltages applied to the PMN‐PT. We describe approaches to achieve high‐quality, epitaxial growth of Fe 0.5 Rh 0.5 on the PMN‐PT films and, a methodology to probe and quantify magnetoelectric coupling in small thin‐film devices via studies of the anomalous Hall effect. By comparing the spin‐flop field change induced by temperature and external voltage, the magnetoelectric coupling coefficient is estimated to reach ≈7 × 10 −8 s m −1 at 325 K while applying a −0.75 V bias.