Gallium Arsenide | Zendy

M.S. EE Dr. Steven H. Voldman B.S. in engineering science | Zendy

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Gallium Arsenide

Author(s) -

M.S. EE Dr. Steven H. Voldman B.S. in engineering science

Publication year - 2009

Publication title -

john wiley and sons, ltd ebooks

Language(s) - English

Resource type - Book series

DOI - 10.1002/9780470747254.ch9

Subject(s) - gallium arsenide , heterojunction bipolar transistor , high electron mobility transistor , optoelectronics , materials science , gallium nitride , amplifier , electrical engineering , engineering , bipolar junction transistor , transistor , nanotechnology , voltage , cmos , layer (electronics)

The demand for high-speed devices for a variety of communications and military purposes has resulted in a growing interest in alternatives to silicon, with particular attention to compounds of groups 3 to 5 on the periodic table. Gallium arsenide has proved to be an ideal substrate material for some uses but is associated with unique health hazards.

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