Open AccessBinding Energy of Negatively Charged Exciton in a Semiconductor Quantum Well: The Role of Interface Defects
Author(s) -
Dacal L.C.O.,
Ferreira R.,
Bastard G.,
Brum J.A.
Publication year - 2002
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
eISSN - 1521-396X
pISSN - 0031-8965
DOI - 10.1002/1521-396x(200204)190:3<799::aid-pssa799>3.0.co;2-8
Subject(s) - trion , exciton , binding energy , quantum well , biexciton , semiconductor , interface (matter) , condensed matter physics , energy (signal processing) , physics , materials science , atomic physics , optoelectronics , quantum mechanics , molecule , laser , gibbs isotherm
We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al 0.3 Ga 0.7 As quantum wells. The dependence of the binding energy gain and of the trion size on the quantum well width are variationally calculated. We show that the trion is more sensitive to interface defects than the exciton.