Open AccessExciton/Free‐Carrier Plasma in GaN‐Based Quantum Wells: Scattering and Screening
Author(s) -
Portnoi M.E.,
Galbraith I.
Publication year - 2001
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
eISSN - 1521-396X
pISSN - 0031-8965
DOI - 10.1002/1521-396x(200101)183:1<87::aid-pssa87>3.0.co;2-o
Subject(s) - exciton , quantum well , free carrier , plasma , scattering , materials science , optoelectronics , condensed matter physics , physics , quantum mechanics , laser
The degree of ionisation of a two‐dimensional electron–hole plasma is calculated in the low‐density (Boltzmann) limit. The electron–hole interaction is considered for all states: optically active and inactive, bound and unbound. The theory is applied to exciton/free‐carrier plasma in GaN‐based quantum wells at room temperature.