Open AccessPhoton Recycling White Light Emitting Diode Based on InGaN Multiple Quantum Well Heterostructure
Author(s) -
Nikolaev V.V.,
Portnoi M.E.,
Eliashevich I.
Publication year - 2001
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
eISSN - 1521-396X
pISSN - 0031-8965
DOI - 10.1002/1521-396x(200101)183:1<177::aid-pssa177>3.0.co;2-h
Subject(s) - photon , optoelectronics , heterojunction , transfer matrix method (optics) , light emitting diode , materials science , diode , spectral line , luminescence , quantum well , quantum , optics , physics , laser , quantum mechanics
A numerical method based on the transfer matrix technique is developed to calculate the luminescence spectra of complex layered structures with photon recycling. Using this method we show a strong dependence of the emission spectra on the optical eigenmode structure of the device. The enhancement of the photon recycling and the LED external efficiency can be achieved by placing the active regions inside single or coupled microcavities.