Open AccessIon‐Beam Induced Current in High‐Resistance Materials
Author(s) -
Yukalov V.I.,
Yukalova E.P.
Publication year - 2000
Publication title -
physica status solidi (a)
Language(s) - English
Resource type - Journals
eISSN - 1521-396X
pISSN - 0031-8965
DOI - 10.1002/(sici)1521-396x(200001)177:1<267::aid-pssa267>3.0.co;2-h
Subject(s) - current (fluid) , irradiation , ion , ion beam , materials science , electric current , semiconductor , voltage , beam (structure) , transient (computer programming) , range (aeronautics) , ion current , high voltage , atomic physics , optoelectronics , chemistry , optics , electrical engineering , composite material , physics , nuclear physics , computer science , thermodynamics , organic chemistry , operating system , engineering
The peculiarities of electric current in high‐resistance materials, such as semiconductors or semimetals, irradiated by ion beams are considered. It is shown that after ion‐beam irradiation an unusual electric current may arise directed against the applied voltage. Such a negative current is a transient effect appearing at the initial stage of the process. The possibility of using this effect for studying the characteristics of irradiated materials is discussed. A new method for defining the mean projected range of ions is suggested.