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Hexagonal boron nitride (hBN) hosts luminescent defects possessing spinqualities compatible with quantum sensing protocols at room temperature.Vacancies, in particular, are readily obtained via exposure to high-energy ionbeams. While the defect creation mechanism via such irradiation is wellunderstood, the occurrence rate of optically active negatively chargedvacancies ($V_B^-$) is an open question. In this work, we exploit focusedhelium ions to systematically generate optically active vacancy defects in hBNflakes at varying density. By comparing the density-dependent spin splittingmeasured by magnetic resonance to calculations based on a microscopic chargemodel, in which we introduce a correction term due to a constant backgroundcharge, we are able to quantify the number of $V_B^-$ defects generated by theion irradiation. We find a lower bound for the fraction (0.2%) of all vacanciesin the optically active, negatively charged state. Our results provide aprotocol for measuring the generation efficiency of $V_B^-$, which is necessaryfor understanding and optimizing luminescent centers in hBN.

Quantifying the creation of negatively charged boron vacancies in He-ion irradiated hexagonal boron nitride