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In this paper, we report an  L g  = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance ( g m_max ) = 2.8 mS  μ m −1  at  V DS  = 0.8 V and on-resistance ( R ON ) = 279 Ω  μ m. At  I D  = 0.56 mA  μ m −1  and  V DS  = 0.5 V, the same device displayed an excellent combination of  f T  = 703 GHz and  f max  = 820 GHz. To the best of the authors’ knowledge, this is the first demonstration of a transistor with both  f T  and  f max  over 700 GHz on any material system.

Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz