Open AccessAn Analysis for Gate-source Voltage of GaN HEMT Focused on Mutual Switch Effect in Half-Bridge Structure
Author(s) -
Hun-Gyu Chae,
Donghee Kim,
Minjung Kim,
Byoung-Kuk Lee
Publication year - 2016
Publication title -
jeon-gi hakoe nonmunji/jeon'gi haghoe nonmunji
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.174
H-Index - 11
eISSN - 2287-4364
pISSN - 1975-8359
DOI - 10.5370/kiee.2016.65.10.1664
Subject(s) - high electron mobility transistor , gallium nitride , transistor , voltage , materials science , electrical engineering , optoelectronics , electronic engineering , engineering , nanotechnology , layer (electronics)