Open AccessAn Analysis for Gate-source Voltage of GaN HEMT Focused on Mutual Switch Effect in Half-Bridge Structure
Author(s) -
Hun-Gyu Chae,
Dong-Hee Kim,
Minjung Kim,
ByoungKuk Lee
Publication year - 2016
Publication title -
the transactions of the korean institute of electrical engineers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.174
H-Index - 11
eISSN - 2287-4364
pISSN - 1975-8359
DOI - 10.5370/kiee.2016.65.10.1664
Subject(s) - high electron mobility transistor , gallium nitride , transistor , voltage , materials science , electrical engineering , optoelectronics , electronic engineering , engineering , nanotechnology , layer (electronics)
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