Open AccessElectrical Performance of Amorphous SiZnSnO TFTs Depending on Annealing Temperature
Author(s) -
Sang Yeol Lee
Publication year - 2012
Publication title -
jeon'gi jeonja jaeryo haghoe nonmunji/jeon-gi jeonja jaeryo hakoe nonmunji
Language(s) - English
Resource type - Journals
eISSN - 2288-3258
pISSN - 1226-7945
DOI - 10.4313/jkem.2012.25.9.677
Subject(s) - annealing (glass) , materials science , thin film transistor , amorphous solid , threshold voltage , optoelectronics , amorphous silicon , sputter deposition , transistor , electrical resistivity and conductivity , silicon , electronic engineering , sputtering , composite material , metallurgy , thin film , voltage , electrical engineering , nanotechnology , layer (electronics) , crystallography , crystalline silicon , chemistry , engineering