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Raman light scattering, low-temperature photoluminescence, light-scatteringtomography, and hydrogenation were used to investigate optical properties ofdefects in strain-relaxed Si_{1-x}Ge_x (0.05 \le x \le 0.50) alloys. Thephotoluminescence emission was characterized by typical zero-phonon,phonon-assisted, and dislocations-related emissions, which are dependent on Gecomposition x. However, luminescence spectra exhibited above band-gap features,which are likely associated with the presence of Si-rich regions in the alloys.The results are correlated with light-scattering tomography, revealing thepresence of dislocations and Si precipitates. The excess peak at 519 cm^{-1} inGe-rich samples is supportive of this observation. At low Ge content, adislocation-related band (D2 line) at 14,204 {\AA} dominates D-band emissionfor x < 0.25 while overall D-band emission intensity decreases with x.Hydrogenation was found to enhance D-band emission, indicating a passivation ofnonradiative recombination centers inside dislocation cores. Si-Si, Si-Ge, andGe-Ge phonons (TO, TA, and LA), which are participating in luminescenceemission, evolve with increasing Ge content and Ge-Ge and Si-Ge TO linesdominate the Raman spectrum to the detriment of the Si-Si TO phonon line. Ramanspectra reveal the presence of alloy fluctuations and possible presence of Geparticles, particularly in Ge-rich samples.

Defect studies in strain-relaxed Si$_{1-x}$Ge$_x$ alloys