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Laser excitation in silicon from femto- to pico-second time scales isstudied. We assume the Three-Temperature Model (3TM) which describes thedynamics of the distinct quasi-temperatures for electrons, holes, and lattice.Numerical results for damage threshold reproduce the experimental results notonly quantitatively, but qualitatively as well, showing dependence on laserpulse duration. Comparison with experimental data suggests that electronemission and thermal melting are both responsible for damage in silicon. Wefound that electron-phonon relaxation time has a significant effect on pulseduration dependence of electron emission.

Three-temperature modeling of laser-induced damage process in silicon