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Carrier mobility is one of the most fundamental material parameters of semiconductors and requisite for device applications and interpretation of physical phenomena. We determined the electron and hole mobilities of a CH 3 NH 3 PbBr 3  single crystal in the high-carrier density regime by combining AC Hall measurements under photoexcitation and two-carrier analysis. Both electron and hole mobilities were significantly enhanced by photo-doping and exceeded 300 cm 2  V −1  s −1 , which are comparable to the electron Hall mobilities of conventional inorganic semiconductors. Our experimental results indicate that charged dislocation scattering dominates the carrier transport at room temperature in the low-carrier density regime.

Observation of high carrier mobility in CH3NH3PbBr3 single crystals by AC photo-Hall measurements

Observation of high carrier mobility in CH₃NH₃PbBr₃ single crystals by AC photo-Hall measurements