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The alloying of the group-III transparent semiconducting sesquioxidesIn$_2$O$_3$ and Ga$_2$O$_3$ can lead to a modulation of the properties of theparent compounds, e.g., the shallow- and deep-donor character of the oxygenvacancy or the presence and absence of a surface electron accumulation layer,respectively. In this work, we investigate the effect of alloying on theelectron transport properties of unintentionally-doped single-crystalline andtextured bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ thin films annealed in oxygen andvacuum with Ga contents up to $x$=0.18. Hall effect measurements demonstrate asurprising increase in electron density due to native defects with added Ga.This increase may be related to the incorporation of Ga-interstitials or oxygenvacancies induced by Ga-related unit-cell distortions. A combined investigationbased on hard and soft x-ray photoelectron spectroscopy measurementsdemonstrates the existence of the surface electron accumulation layer for allalloy films and, hence, no depletion up to $x$=0.18. Finally, we additionallydemonstrate a single-crystalline (In$_{0.92}$Ga$_{0.08}$)$_2$O$_3$:Sn film, asa possible transparent conductive oxide with a wider band gap than that of(Sn-doped) In$_2$O$_3$.

japanese journal of applied physics

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films  ($x\le0.18$): Native point defects, Sn-doping, and the surface electron  accumulation layer