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The coming information era has brought about a data explosion which requires smaller and smarter memory devices. In this paper, a ReS 2  based high-k dielectric stack (Al 2 O 3 /ZrO 2 /Al 2 O 3 ) memory was fabricated as a potential candidate for future storage and computing. The device exhibits preeminent electrical characteristics, such as high On/Off current ratio (over 10 6  ), large memory window (4 V at a 5 V sweep voltage), fast programming and erasing speed plus excellent retention ability. Besides, our devices beautifully emulated the short/long-term potentiation/depression behavior, which shows the good synaptic properties of our device. These excellent storage and synaptic properties are promising for a wide range of applications for our memory device in the future.

ReS2 based high-k dielectric stack charge-trapping and synaptic memory

ReS₂ based high-k dielectric stack charge-trapping and synaptic memory