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The effect of Si surface atomically flattening (SAF) on the Hf-based metal/oxide/nitride/oxide/Si (MONOS) nonvolatile memory (NVM) characteristics was investigated. The memory window (MW) obtained in the  C – V characteristics for the Hf-based MONOS diode was increased from 4.5 to 4.8 V by the Si SAF. The charge centroid ( Z eff ) was found to be shifted from the center of the HfN 1.1  charge trapping layer (CTL) to the interface at block layer and CTL for the Hf-based MONOS diode with the Si SAF. Furthermore, the MW of 3.2 V was realized for the Hf-based MONOS NVM with improvement of device characteristics by Si SAF.

Improvement of Hf-based metal/oxide/nitride/oxide/Si nonvolatile memory characteristics by Si surface atomically flattening