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In this paper, an improved and simplified modification of a tantalum oxide memristor model is presented. The proposed model is applied and analyzed in hybrid and passive memory crossbars in LTSPICE environment and is based on the standard Ta2O5 memristor model proposed by Hewlett–Packard. The discussed modified model has several main enhancements—inclusion of a simplified window function, improvement of its effectiveness by the use of a simple expression for the i–v relationship, and replacement of the classical Heaviside step function with a differentiable and flat step-like function. The optimal values of coefficients of the tantalum oxide memristor model are derived by comparison of experimental current–voltage relationships and by using a procedure for parameter estimation. A simplified LTSPICE library model, correspondent to the analyzed tantalum oxide memristor, is created in accordance with the considered mathematical model. The improved and altered Ta2O5 memristor model is tested and simulated in hybrid and passive memory crossbars for a state near to a hard-switching operation. After a comparison of several of the best existing memristor models, the main pros of the proposed memristor model are highlighted—its improved implementation, better operating rate, and good switching properties.

A Simplified Tantalum Oxide Memristor Model, Parameters Estimation and Application in Memory Crossbars