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In this paper, a chemically amplified (CA) i-line photoresist system is described including a phenolic resin modified with glycidyl methacrylate (GMA) addition and protected with di-tert-butyl dicarbonate (BOC group), here called JB resin. JB resin with different degrees of BOC protection was synthesized and characterized with ultraviolet spectrophotometry, Fourier transform infrared spectroscopy and gel permeation chromatography. These resins were also evaluated in CA resists by formulating the JB resin with a photoacid generator (PAG) and tested at 405 nm and 365 nm exposure wavelengths. The BOC protection ratio at approximately 25 mol% of the Novolak phenol group showed the best performance. The resist showed high sensitivity (approximately 190 mJ/cm 2 ), high resolution and good alkali developer resistance with reliable repeatability, indicating the great practical potential of this JB resist system.

New Chemically Amplified Positive Photoresist with Phenolic Resin Modified by GMA and BOC Protection