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Pristine, and In-, Sn-, and (In, Sn)-doped Bi 2 Se 3 nanoplatelets synthesized on Al 2 O 3 (100) substrate by a vapor-solid mechanism in thermal CVD process via at 600 °C under 2 × 10 -2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi 2 Se 3 . FPA-FTIR reveals that the optical bandgap of doped Bi 2 Se 3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi 2 Se 3 . XRD, FESEM-EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V0), (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Photocurrent that was generated in (In,Sn)-doped Bi 2 Se 3 under UV(8 W) and red (5 W) light revealed stable photocurrents of 5.20 × 10 -10 and 0.35 × 10 -10 A and high I photo /I dark ratios of 30.7 and 52.2. The rise and fall times of the photocurrent under UV light were 4.1 × 10 -2 and 6.6 × 10 -2 s. Under UV light, (In,Sn)-dopedBi 2 Se 3 had 15.3% longer photocurrent decay time and 22.6% shorter rise time than pristine Bi 2 Se 3 , indicating that (In,Sn)-doped Bi 2 Se 3 exhibited good surface conduction and greater photosensitivity. These results suggest that In, Sn, or both dopants enhance photodetection of pristine Bi 2 Se 3 under UV and red light. The findings also suggest that type of defect is a more important factor than optical bandgap in determining photo-detection sensitivity. (In,Sn)-doped Bi 2 Se 3 has greater potential than undoped Bi 2 Se 3 for use in UV and red-light photodetectors.

Photosensing and Characterizing of the Pristine and In-, Sn-Doped Bi2Se3 Nanoplatelets Fabricated by Thermal V–S Process