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This paper presents new photovoltaic solar cells with Cu 2 ZnSnSe 4 /CH 3 NH 3 PbI 3 (MAPbI 3 )/ZnS/IZO/Ag nanostructures on bi-layer Mo/FTO (fluorine-doped tin oxide) glasssubstrates. The hole-transporting layer, active absorber layer, electron-transporting layer, transparent-conductive oxide layer, and top electrode-metal contact layer, were made of Cu 2 ZnSnSe 4 , MAPbI 3 perovskite, zincsulfide, indium-doped zinc oxide, and silver, respectively. The active absorber MAPbI 3 perovskite film was deposited on Cu 2 ZnSnSe 4 hole-transporting layer that has been annealed at different temperatures. TheseCu 2 ZnSnSe 4 filmsexhibitedthe morphology with increased crystal grain sizesand reduced pinholes, following the increased annealing temperature. When the perovskitefilm thickness was designed at 700 nm, the Cu 2 ZnSnSe 4 hole-transporting layer was 160 nm, and the IZO (indium-zinc oxide) at 100 nm, and annealed at 650 °C, the experimental results showed significant improvements in the solar cell characteristics. The open-circuit voltage was increased to 1.1 V, the short-circuit current was improved to 20.8 mA/cm 2 , and the device fill factor was elevated to 76.3%. In addition, the device power-conversion efficiency has been improved to 17.4%. The output power P max  was as good as 1.74 mW and the device series-resistance was 17.1 Ω.

Effects of Annealing on Characteristics of Cu2ZnSnSe4/CH3NH3PbI3/ZnS/IZO Nanostructures for Enhanced Photovoltaic Solar Cells