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38.2: Highly Efficient P‐Type Only Cross‐Coupled DC‐DC Converter Using Low Temperature Poly‐Si (LTPS) TFTs for Mobile Display Applications
Author(s) -
Yoon JoongSun,
Kang JinSeong,
Kwon OhKyong
Publication year - 2008
Publication title -
sid symposium digest of technical papers
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.351
H-Index - 44
eISSN - 2168-0159
pISSN - 0097-966X
DOI - 10.1889/1.3069723
Subject(s) - thin film transistor , materials science , diode , electrical engineering , voltage , optoelectronics , charge pump , forward converter , power (physics) , low voltage , capacitor , boost converter , engineering , physics , layer (electronics) , quantum mechanics , composite material
Abstract This paper proposes a novel highly efficient p‐type only cross‐coupled DC‐DC converter using low temperature poly‐Si (LTPS) TFTs for mobile display applications. for fast switching operation at the gate node of driving TFT, the proposed p‐type only DC‐DC converter includes diode connected TFTs to initialize the driving TFT and a capacitive coupled clock input. The proposed DC‐DC converter was fabricated in p‐type only LTPS process. The measured output voltage is 8.8V in voltage up‐converting operation while consuming a load current of 250μA. Its power efficiency is 79.6%. Compared to the previously reported Dickson's charge pump, power efficiency is increased to 202.0% and integrated circuit area is reduced to 63.3%.