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In this work we study, theoretically, electronic mobility of the siliconcarbide semiconductor in the 3C phase, named 3C-SiC. 3C-SiC has shown greatpotential for applications in extreme conditions. Thus, the study of theelectronic mobility of this semiconductor is of great interest. In this workwere theoretically deduced: drift velocity, displacement and mobility of thecharge carriers in the n-type doped 3C-SiC semiconductor, subjected to aconstant electric field. The dependence of these transport properties as afunction of the intensity of the electric field and temperature was analyzed.For this, a differential equation of motion was used with a source term (lowintensity electric fields) and a term of resistance to movement (electricalresistance).

Electronic Transport in the Silicon Carbide Semiconductor in Phase 3C